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| SHINDENGEN Schottky Rectifiers (SBD) SBD Bridges D4SBS6 60V 4A FEATURES *oe Single In-Line Package Thin *oe SBD Bridge *oe Low VF APPLICATION OUTLINE DIMENSIONS Case : 3S (Unit : mm) *oe power supply Switching *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction TemperatureTj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse Voltage ulse width 0.5ms, duty 1/40 VRRSM P 65 V Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Tc=114*Z IO 4 A 50Hz sine wave, R-load*@ Without heatsink Ta=46*Z 2.3 Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 *Z 60 A Repetitive Peak Surge Reverse Power Pulse width 10Es, Rating of per diode, Tj=25*Z330 PRRSM W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque R i F TOR * ecommended torque*0.5Nm*j 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage I =2A, Pulse measurement, Rating of per diode VF F Max.0.62 V Reverse Current IR V=V , Pulse measurement, Rating of per diode Max.2 mA R RM Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode TYP 180 pF AEjc junction to case * * With heatsink @@ Max.5.5 Thermal Resistance AEjl junction to lead *@*@ Without heatsink Max.6 *Z/W AEja junction to ambient Without heatsink Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SBS6 Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D4SBS6 Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] D4SBS6 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] D4SBS6 20 Reverse Power Dissipation Reverse Power Dissipation PR [W] 15 DC D=0.05 0.1 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D4SBS6 8 Forward Power Dissipation DC 7 Forward Power Dissipation PF [W] D=0.8 SIN 0.3 0.2 0.1 0.05 0.5 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D4SBS6 8 Derating Curve Heatsink Tc Tc Average Rectified Forward Current IO [A] 7 DC 6 5 4 D=0.8 0.5 SIN 0.3 3 0.2 2 1 0 80 0.1 0.05 90 100 110 120 130 140 150 160 Case Temperature Tc [C] Sine wave R-load with heatsink D4SBS6 5 Derating Curve Average Rectified Forward Current IO [A] 4 DC D=0.8 3 0.5 SIN 0.3 0.2 0.1 1 0.05 PCB Glass-epoxy substrate Soldering land 5mm 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D4SBS6 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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